Method of forming inter-metal dielectric layer in a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorSang Deok KIM
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Abstract
A method of forming an inter-metal dielectric layer in a semiconductor device is disclosed. A metal wire is patterned on a semiconductor substrate. A buffer oxide layer and a material layer form an inter-metal dielectric layer on a resulting surface of the metal wire and the semiconductor substrate in an in-situ manner. A portion of the metal wire is etched when the inter-metal dielectric layer is formed to prevent generation of an abnormal layer between the metal wires, thereby preventing degradation of operational characteristics of the device.
Claims11
A method of forming an inter-metal dielectric layer in a semiconductor device, the method comprising:
- forming a metal layer over a semiconductor substrate;
- patterning the metal layer to form a metal wire;
- forming a buffer layer over a resulting surface of the semiconductor substrate and the metal wire;
- and
- forming an inter-metal dielectric layer over the buffer layer, wherein the buffer layer prevents plasma damage from occurring when forming the inter-metal dielectric layer.
Dependencies are inferred from the claim text.