Method for reducing stress between a conductive layer and a mask layer and use of the same

Abstract

A method for reducing stress between a conductive layer and a mask layer is provided. The method for reducing stress comprises a step of performing a plasma treatment with a nitrogen-containing gas to modify a surface of the conductive layer prior to the formation of the mask layer upon the surface. The method is useful for the manufacture of a gate, and the method for manufacturing the gate comprises the steps of providing a substrate; and sequentially depositing an oxide layer, a conductive layer, and a mask layer on the substrate to form a gate stack structure. The conductive layer is subjected to a surface plasma treatment with a nitrogen-containing gas prior to depositing the mask layer to modify its surface.

Dependencies are inferred from the claim text.