Trench Capacitor with Void-Free Conductor Fill

A method of forming a trench capacitor comprising:

• patterning a bottle shaped trench in a substrate, said bottle shaped trench having an upper portion and a lower portion, wherein said upper portion is adjacent a surface of said substrate and said lower portion is within said substrate, and wherein said upper portion is narrower than said lower portion;
• forming a node dielectric in said bottle shaped trench;
• depositing an initial conductor within said lower portion of said bottle shaped trench, such that a void is formed within said initial conductor;
• forming an insulating collar in said upper portion of said bottle shaped trench above said initial conductor;
• simultaneously etching a center portion of said insulating collar and said initial conductor until said void is exposed, wherein said etching forms a center opening within said insulating collar and said initial conductor;
• and
• depositing an additional conductor in said center opening such that said additional conductor is formed at least to a level of said surface of said substrate.