Apparatus and method for heating semiconductor wafers with improved temperature uniformity
AssigneeToshiba America Electronic Components, Inc.
InventorSeiji Nakagawa
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Abstract
Apparatuses and methods for heating semiconductor wafers with high temperature uniformity are described. In particular, rotation of the hot plate and/or wafer during heating operations such as the post exposure bake (PEB) can compensate for non-circular temperature gradients caused by the random generation of air currents and other non-uniform environmental conditions within the oven chamber. Temperature variations caused by these influences, while not easily corrected through zonal heater adjustment alone, are a major determinant of critical dimension control and consequently the overall semiconductor quality.
Claims20
An apparatus for heating a semiconductor wafer, the apparatus comprising:
- a heater;
- and
- a rotatable hot plate disposed above the heater and configured to transfer heat from the heater to an upper surface of the hot plate.
A method for heating a semiconductor wafer, the method comprising
- (a) positioning said semiconductor wafer above a hot plate,
- (b) rotating said hot plate while maintaining said hot plate and said semiconductor wafer at an elevated temperature.
A method for making a semiconductor chip, the method comprising
- (a) exposing photo resist, which is coated on a semiconductor wafer, to a selected pattern of radiation;
- (b) positioning said semiconductor wafer above a hot plate;
- and
- (c) rotating said hot plate while maintaining said hot plate and said semiconductor wafer at an elevated temperature.
Dependencies are inferred from the claim text.