Photomask with alignment marks for the current layer

A photomask with alignment marks for the current layer having four edges, wherein the photomask comprising:

• a plurality of main patterns;
• an inter-scribed lane pattern sited between the plurality of main patterns;
• an extra-scribed lane pattern sited merely on three edges of the photomask to improve the mask area use efficiency;
• a first set of the alignment marks for the current layer sited on opposite edges of the extra-scribed lane pattern;
• and
• a second set of alignment marks for the current layer sited on opposite edges in which only one has the extra-scribe lane pattern and placed on opposite locations in the inter-scribe lane pattern and the extra-scribe lane pattern, respectively, wherein each alignment mark of the second set of alignment marks for the current layer comprising:
• a plurality of parallel patterns parallel to an extended direction of the opposite edges;
• and
• at least one vertical pattern sited on at least one end of the plurality of parallel patterns.