Semiconductor apparatus and method of manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorTatsuya Iwasaki
Life of this patent
Estimating the term…
Abstract
It is an object of the present invention to provide a technology of controlling a threshold voltage of a thin film transistor in which an amorphous oxide film is applied to a channel layer. There is provided a semiconductor apparatus including a plurality of kinds of transistors, each of the plurality of kinds of transistors including a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements; and threshold voltages of the plurality of kinds of transistors are different from one another by changing an element ratio of the amorphous oxide.
Claims10
A semiconductor apparatus, comprising a plurality of kinds of semiconductor devices, wherein:
- the plurality of kinds of semiconductor devices each include a semiconductor of an amorphous oxide containing a plurality of kinds of metal elements;
- and
- an element ratio of the amorphous oxide is changed so that respective electrical characteristics of the plurality of kinds of semiconductor devices are different from one another.
A semiconductor apparatus, comprising a plurality of kinds of transistors, wherein:
- the plurality of kinds of transistors each include a channel layer made of an amorphous oxide containing a plurality of kinds of metal elements;
- and
- an element ratio of the amorphous oxide is changed so that respective threshold voltages of the plurality of kinds of transistors are different from one another.
A method of manufacturing a semiconductor apparatus comprising a plurality of kinds of oxide semiconductor films on a substrate, wherein in the formation of the oxide semiconductor films, at least two different materials are simultaneously supplied to the substrate from different directions.
A method of manufacturing a semiconductor apparatus comprising a plurality of kinds of oxide semiconductor films as channel layers of transistors on a substrate, wherein in the formation of the oxide thin film, at least two different materials are simultaneously supplied to the substrate from different directions.
A method of manufacturing a semiconductor apparatus, comprising a plurality of kinds of oxide semiconductor films as channel layers of transistors on a substrate, wherein material sources for depositing the oxide semiconductor films are disposed in rows, and in the formation of the oxide semiconductor films, the substrate is moved in a direction different from a direction in which the material sources are disposed.
Dependencies are inferred from the claim text.