Exposure data generation method and device, exposure data verification method and device and storage medium
AssigneeFujitsu Limited
InventorKozo Ogino
Life of this patent
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Abstract
Exposure verification is applied to exposure data indicating a pattern to be exposed by a charged particle beam. If an error point is extracted from the exposure data by the exposure verification, the values of coefficients are modified and exposure data is regenerated taking into consideration the coefficients whose values have been modified. Thus, exposure data is re-generated by changing each of the coefficient values within its appropriate range.
Claims13
An exposure data generation method for generating exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
- obtaining exposure data indicating a pattern to be exposed by the charge particle beam generated from layout data indicating a pattern to be formed on the resist film;
- peforming exposure verification the exposure data, using at least one changeable coefficient;
- modifying the value of the coefficient when an error point is extracted from the exposure data by the exposure verification;
- and
- re-generating exposure data taking into consideration the coefficient whose value is modified.
An exposure data generation method for generating exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
- calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in film thickness of a layer constituting the semiconductor substrate;
- and
- extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure.
An exposure data generation method for generating exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
- calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in dimensions of a pattern formed on a layer constituting the semiconductor substrate;
- and
- extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure.
An exposure data generation device for generating exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
- data acquisition unit for obtaining exposure data indicating a pattern to be exposed by the charge particle beam generated from layout data indicating a pattern to be formed on the resist film;
- exposure verification unit for performing exposure verification the exposure data, using one or more changeable coefficients;
- coefficient modification unit for modifying the value of the coefficient when an error point is extracted from the exposure data by the exposure verification;
- and
- data generation unit for re-generating exposure data taking into consideration the coefficient whose value is modified.
An exposure data verification device for verifying exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
- calculation unit for calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in film thickness of a layer constituting the semiconductor substrate;
- and
- exposure verification unit for performing exposure verification for extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure calculated by the calculation unit.
An exposure data verification device for verifying exposure data for exposing a resist film formed on a multi-layered semiconductor substrate by a charged particle beam, comprising:
- calculation unit for calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in dimensions of a pattern formed on a layer constituting the semiconductor substrate;
- and
- exposure verification unit for performing exposure verification for extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure by the calculation unit.
A computer-readable storage medium on which is recorded a program for enabling a computer to perform functions, the functions comprising:
- data acquisition function for obtaining exposure data indicating a pattern to be exposed by the charge particle beam generated from layout data indicating a pattern to be formed on the resist film;
- exposure verification function for performing exposure verification the exposure data, using one or more changeable coefficients;
- coefficient modification function for modifying the value of the coefficient when an error point is extracted from the exposure data by the exposure verification;
- and
- data generation function for re-generating exposure data taking into consideration the coefficient whose value is modified.
A computer-readable storage medium on which is recorded a program for enabling a computer to perform functions, the functions comprising:
- calculation function for calculating a plurality of amounts of exposure obtained on the resist film taking into consideration an error caused in film thickness of a layer constituting the semiconductor substrate;
- and
- exposure verification function for performing exposure verification for extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure calculated by the calculation function.
A computer-readable storage medium on which is recorded a program for enabling a computer to perform functions, the functions comprising:
- calculation function for calculating a plurality of amounts of exposure obtained on the resist film taking into -consideration an error caused in dimensions of a pattern formed on a layer constituting the semiconductor substrate;
- and
- exposure verification function for performing exposure verification for extracting a point to be inappropriate from the exposure data, based on the plurality of calculated amounts of exposure by the calculation function.
Dependencies are inferred from the claim text.