Method of forming patterns and/or pattern data for controlling pattern density of semiconductor devices and pattern density controlled semiconductor devices
OwnerSung-gyu Park, Myoung-jun Jang +1inventors
InventorsSung-gyu Park, Myoung-jun Jang, Ji-young Shin
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Abstract
A method of forming a pattern for a semiconductor device includes forming first pattern data, forming second pattern data, forming third pattern data, forming pattern density measurement data including the first, second, and third pattern data, measuring a pattern density of the pattern density measurement data, adjusting shapes of patterns in the third pattern data based on a comparison of the measured density value and a reference density so as to form fourth pattern data, and forming final pattern data including the first, second, and fourth pattern data.
Claims20
A method of forming pattern data for a semiconductor device, the method comprising:
- forming first pattern data;
- forming second pattern data;
- forming third pattern data;
- forming pattern density measurement data including the first, second, and third pattern data;
- measuring a pattern density of the pattern density measurement data;
- adjusting shapes of patterns in the third pattern data based on a comparison of the measured density value and a reference density so as to form fourth pattern data;
- and
- forming final pattern data including the first, second, and fourth pattern data.
A method of forming pattern data for a semiconductor device, the method comprising:
- forming reference pattern data;
- forming first pattern data having different pattern densities;
- forming second pattern data;
- measuring a pattern density by overlapping the reference pattern data and the second pattern data;
- and
- selecting first pattern data corresponding to the measured pattern density among the first pattern data having different pattern densities.
A method of forming a pattern for a semiconductor device, the method comprising:
- forming a first pattern;
- forming a second pattern;
- measuring a total pattern density when the first pattern and the second pattern overlap each other;
- comparing the measured density and a reference pattern density to form a third pattern;
- and
- forming a final pattern in which the second pattern and the third pattern overlap each other.
A semiconductor device comprising:
- a first semiconductor element that has a first main pattern density and a first dummy pattern density;
- and
- a second semiconductor element that has a second main pattern density and a second dummy pattern density,
- wherein a ratio of the first main pattern density and the second main pattern density is inversely proportion to a ratio of the first dummy pattern density and the second dummy pattern density.
Dependencies are inferred from the claim text.