Cleaning method for use in semiconductor device fabrication
AssigneeMacronix International Co., Ltd.
InventorsChia-Wei Wu, Tuung Luoh, Ling-Wuu Yang, Kuang-Chao Chen
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Abstract
A novel cleaning method for preventing defects and particles resulting from post tungsten etch back or tungsten chemical mechanical polish is provided. The cleaning method comprises providing a stack structure of a semiconductor device including a tungsten plug in a dielectric layer. The tungsten plug has a top excess portion. A surface of the stack structure is then contacted with a cleaning solution comprising hydrogen peroxide. Next, the surface of the stack structure is contacted with dilute hydrofluoric acid. The cleaning solution and hydrofluoric acid are capable of removing the top excess portion and particles on the surface of the stack structure.
Claims19
A cleaning method used in a semiconductor device manufacturing process, comprising:
- providing a stack structure of a semiconductor device, including a contact plug in a dielectric layer, the contact plug having a top excess portion;
- contacting a surface of the stack structure with a cleaning solution comprising hydrogen peroxide (H2O2);
- and
- contacting the surface of the stack structure with dilute hydrofluoric acid (DHF), wherein the contacting steps are capable of removing the top excess portion of the contact plug and cleaning the surface of the stack structure.
A method of forming a semiconductor device, comprising:
- providing a dielectric layer, with at least one hole, on a semiconductor substrate;
- depositing conductive material over the dielectric layer;
- removing part of the conductive material and leaving a top excess portion of the conductive material;
- contacting the device with a cleaning solution comprising hydrogen peroxide;
- and
- contacting the device with dilute hydrofluoric acid;
- wherein the contacting steps are capable of removing the top excess portion of the conductive material and cleaning the semiconductor device.
Dependencies are inferred from the claim text.