Electrically programmable fuse for silicon-on-insulator (soi) technology
AssigneeInternational Business Machines Corporation
InventorsChandrasekharan Kothandaraman, Edward Maciejewski
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Abstract
A fuse structure and method of forming the same is described, wherein the body of the fuse is formed from a crystalline semiconductor body on an insulator, preferably of a silicon-on-insulator wafer, surrounded by a fill-in dielectric. The fill-in dielectric is preferably a material that minimizes stresses on the crystalline body, such as an oxide. The body may be doped, and may also include a silicide layer on the upper surface. This fuse structure may be successfully programmed over a wide range of programming voltages and time.
Claims9
A method of manufacturing an electrically programmable fuse comprising the steps of:
- providing a wafer having a crystalline semiconductor layer on an insulating layer, said insulating layer formed on a semiconductor substrate;
- patterning said crystalline semiconductor layer to form an elongated crystalline semiconductor body disposed atop said insulating layer;
- forming a fill-in dielectric on said insulating layer so as to substantially surround the sidewalls of said semiconductor body without covering the upper surface of said crystalline semiconductor body;
- depositing a capping layer over the upper surface of said crystalline semiconductor and said fill-in dielectric;
- patterning contact openings through said capping layer to expose the upper surface of said crystalline semiconductor body at opposing ends of said body;
- and
- filling said contact openings with a conductive material.
Dependencies are inferred from the claim text.