Method for removing residue containing an embedded metal

A method for creating an interconnect structure, comprising:

• forming a cavity in a dielectric layer located over a substrate to expose a portion of an etch-stop layer underlying the dielectric layer;
• removing the exposed portion of the etch-stop layer to expose at least a portion of a conductive feature underlying the etch-stop layer, the removing leaving a residue having an embedded metal therein above at least a portion of the conductive feature;
• subjecting the residue having the embedded metal therein to a short duration oxidation process so as to oxidize a substantial portion of the embedded metal;
• and
• removing the residue containing the oxidized embedded metal using an etch process.

A method for manufacturing an integrated circuit, comprising:

• providing a semiconductor substrate having transistor devices located thereover;
• forming a dielectric layer over the transistor devices;
• and
• forming an interconnect structure within the dielectric layer, the interconnect structure contacting at least one of the transistor devices, including;
• forming a cavity in the dielectric layer to expose a portion of an etch-stop layer underlying the dielectric layer;
• removing the exposed portion of the etch-stop layer to expose at least a portion of a conductive feature underlying the etch-stop layer, the removing leaving a residue having an embedded metal therein above at least a portion of the conductive feature;
• subjecting the residue having the embedded metal therein to a short duration oxidation process so as to oxidize a substantial portion of the embedded metal;
• removing the residue containing the oxidized embedded metal using an etch process;
• and
• filling the cavity having the residue removed therefrom with a conductive material.