Multi-component barrier polishing solution
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsJinru Bian, Zhendong Liu
Life of this patent
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Abstract
The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quantenary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
Claims10
A polishing solution useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics comprising:
- 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with
- wherein R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of2 to 25 carbon atoms, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water, and the solution having a pH of less than 7.
A polishing solution useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics comprising:
- 0.001 to 15 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with
- wherein R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 10 carbon atoms, the organic-containing ammonium cationic salt has 5 to 25 carbon atoms, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 5 to 20 carbon atoms and the total carbon atoms of the ammonium cationic salt plus the anionic surfactant being 10 to 35, 0 to 50 weight percent abrasive and balance water;
- and the solution having a pH of less than 5.
A method of polishing semiconductor substrates, including the step of:
- polishing the semiconductor substrate with a polishing solution and a polishing pad, the polishing solution useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics comprising:
- 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt fonned with
- wherein R1, R2, R3 and R4 are radicals, R1 has a carbon chain length of 2 to 25 carbon atoms, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water;
- and the solution having a pH of less than 7.
Dependencies are inferred from the claim text.