Capacitor structure

A capacitor structure, comprising:

• a plurality of conductive layers, which are stacked, each conductive layer having a first comb conductive pattern and a second comb conductive pattern, the teeth of the first comb conductive pattern and the teeth of the second comb conductive pattern being disposed interlacedly;
• a dielectric layer, disposed between the first comb conductive pattern and the second comb conductive pattern and between two adjacent conductive layers;
• and
• a plurality of contacts, disposed in the dielectric layer, electrically connecting to the first comb conductive patterns in two adjacent conductive layers and to the second comb conductive patterns in two adjacent conductive layers respectively, wherein
• the contact electrically connecting to the first comb conductive patterns in two adjacent conductive layers is a first comb contact, the pattern of the first comb contact corresponds to the pattern of the first comb conductive pattern, and the boundary of the first comb contact is located within the boundary of the first comb conductive pattern.

A capacitor structure, comprising:

• a plurality of conductive layers, which are stacked, each conductive layer having a first spiral conductive pattern and a second spiral conductive pattern disposed interlacedly;
• a dielectric layer, disposed between the first spiral conductive pattern and the second spiral conductive pattern and between two adjacent conductive layers;
• and
• a plurality of contacts, disposed in the dielectric layer, electrically connecting to the first spiral conductive patterns in two adjacent conductive layers and to the second spiral conductive patterns in two adjacent conductive layers respectively, wherein
• the contact electrically connecting the first spiral conductive patterns in two adjacent conductive layers is a first spiral contact, the pattern of the first spiral contact corresponds to the pattern of the first spiral conductive pattern, and the boundary of the first spiral contact is located within the boundary of the first spiral conductive pattern.

A capacitor structure, comprising:

• a plurality of conductive layers, which are stacked, each conductive layer having a first conductive pattern and a second conductive pattern, the first conductive pattern having an opening, the second conductive pattern being disposed in the opening;
• a dielectric layer, disposed between the first conductive pattern and the second conductive pattern and between two adjacent conductive layers;
• and
• a plurality of contacts, disposed in the dielectric layer, electrically connecting to the first conductive patterns in two adjacent conductive layers and to the second conductive patterns in two adjacent conductive layers respectively, wherein
• the contact electrically connecting to the first conductive patterns in two adjacent conductive layers is a circular contact, the pattern of the circular contact corresponds to the pattern of the first conductive pattern, and the boundary of the circular contact is located within the boundary of the first conductive pattern.