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US 2007/0181971 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorSang-hoon Park
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Abstract
A semiconductor device including inductors with improved reliability and a method of manufacturing the same are provided. The semiconductor device may include a substrate, an insulating film pattern formed on the substrate and having an opening, an amorphous metal nitride film formed inside the opening, a diffusion reducing or preventing film formed on the amorphous metal nitride film, and a conductive film including the diffusion reducing or preventing film filling the inside of the opening.
Claims28
A semiconductor device comprising:
- a semiconductor substrate;
- a multilayered wiring structure on the semiconductor substrate;
- a passivation film covering the uppermost wiring layer of the multilayered wiring structure;
- a first polyimide film on the passivation film;
- and
- inductors in the passivation film and the first polyimide film.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a multilayered wiring structure on a semiconductor substrate;
- forming a passivation film and a first polyimide film covering the uppermost wiring layer of the multilayered wiring structure sequentially;
- and
- forming inductors in the passivation film and the first polyimide film.
1 more element
Dependencies are inferred from the claim text.