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AssigneeCabot Microelectronics Corporation
InventorsFrancesco De Rege Thesauro, Steven Grumbine, Phillip Carter, Shoutian Li, Jian Zhang, David Schroeder, Ming-Shih Tsai
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The invention provides a composition for chemical-mechanical polishing, The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
A chemical-mechanical polishing composition comprising:
A chemical-mechanical polishing composition comprising:
A chemical-mechanical polishing composition comprising:
A chemical-mechanical polishing composition comprising:
A method of chemical-mechanical polishing comprising:
A method of chemical-mechanical polishing comprising:
A method of chemical-mechanical polishing comprising:
Dependencies are inferred from the claim text.