Metal capacitor including lower metal electrode having hemispherical metal grains
AssigneeSamsung Electronics Co., Ltd.
InventorsSeok-Woo HONG, Chang-Huhn LEE, Jae-Hun KIM
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Abstract
Disclosed is a metal capacitor including a lower electrode having hemispherical metal grains thereon. The metal capacitor includes a lower metal electrode containing Ti, hemispherical metal grains containing Pd and formed on the lower metal electrode containing Ti, a dielectric layer formed on the lower metal electrode containing Ti and the hemispherical metal grains containing Pd, and an upper metal electrode formed on the dielectric layer.
Claims25
A metal capacitor comprising:
- a lower metal electrode containing titanium;
- hemispherical metal grains containing palladium disposed on an upper surface of the lower metal electrode;
- a dielectric layer formed on the lower metal electrode and the hemispherical metal grains;
- and
- an upper metal electrode formed on the dielectric layer.
A metal capacitor comprising:
- a plurality of transistors formed on a substrate;
- a first insulating layer disposed on the plurality of transistors;
- a via plug formed through the first insulating layer to be electrically connected to the substrate;
- a second insulating layer disposed on the first insulating layer and having a hole exposing an upper surface of the via plug;
- a lower metal electrode containing titanium, which is disposed to contact the exposed upper surface of the via plug and a side wall of the hole, the lower metal electrode having an inner wall and an outer wall;
- hemispherical metal grains containing palladium and formed on the lower metal electrode;
- a dielectric layer formed on the lower metal electrode and the hemispherical metal grains;
- and
- an upper metal electrode formed on the dielectric layer.
A method of fabricating a metal capacitor, the method comprising:
- forming a lower metal electrode containing titanium;
- dipping the lower metal electrode into an electrolyte solution containing palladium, thereby forming hemispherical metal grains containing palladium on the lower metal electrode;
- forming a dielectric layer on the lower metal electrode;
- and
- forming an upper metal electrode on the dielectric layer.
A method of fabricating a metal capacitor, the method comprising:
- forming a plurality of transistors on a substrate;
- forming a first insulating layer on the plurality of transistors;
- forming a conductive via plug through the first insulating layer to contact the substrate;
- forming a second insulating layer on the first insulating layer and the via plug;
- forming a third insulating layer on the second insulating layer;
- forming a hole through the second insulating layer and the third insulating layer thereby exposing the via plug;
- forming a lower metal electrode containing titanium within the hole;
- dipping the lower metal electrode into an electrolyte solution containing palladium, thereby forming hemispherical metal grains containing palladium on the lower metal electrode;
- forming a dielectric layer on the lower metal electrode;
- and
- forming an upper metal electrode on the dielectric layer.
Dependencies are inferred from the claim text.