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US 2007/0177287 A1Published application
Method of manufacturing a mirror and a mirror device
OwnerKazunari Oka, Takashi Niwa +2inventors
InventorsKazunari Oka, Takashi Niwa, Norio Chiba, Susumu Ichihara
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Abstract
A method of manufacturing a mirror having high verticality and less surface roughness, comprising forming a mask material to the surface of a silicon substrate, applying anisotropic dry etching and anisotropic wet etching, thereby anisotropically dry etching the surface substantially parallel with the crystal face in perpendicular to the surface of the substrate and then forming a reflection surface by the anisotropic wet etching step.
Claims22
1-33. (canceled)
A mirror device comprising:
- a semiconductor substrate;
- and
- a pair of micro-mirrors disposed on a surface of the semiconductor substrate, each of the micro-mirrors having a reflection surface disposed at an angle of 90° relative to one another and relative to the surface of the semiconductor substrate.
An optical device comprising:
- an optical fiber for emitting optical light;
- a mirror device comprising a semiconductor substrate and first and second micro-mirrors disposed on a surface of the semiconductor substrate, the first micro-mirror having a first reflection surface that receives and reflects therefrom optical light emitted by the optical fiber and the second micro-mirror having a second reflection surface that receives and reflects therefrom optical light reflected from the first reflection surface, the first and second reflection surfaces being disposed at an angle of 90° relative to one another and relative to the surface of the semiconductor substrate;
- and
- a detector that receives optical light reflected from the second reflection surface.
1 more element
A mirror device comprising:
- a pair of micro-mirrors each fabricated by forming a mask material on a surface of a semiconductor substrate, anisotropically dry etching the semiconductor substrate to form a surface disposed substantially parallel with a crystal face perpendicular to the surface of the semiconductor substrate, and anisotropically wet etching the semiconductor substrate including the crystal face and the surface disposed substantially parallel with the crystal face, thereby providing each of the micro-mirrors with a reflection surface disposed at an angle of 90° relative to one another and relative to the surface of the semiconductor substrate.
Dependencies are inferred from the claim text.