Compositions and methods for chemical mechanical polishing interlevel dielectric layers
OwnerSarah Lane, Charles Yuinventors
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Abstract
The present invention provides an aqueous composition useful for polishing silica and boro-phosphate-silicate-glass on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrdidone, 0 to 5 cationic compound, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has a average molecular weight between 100 grams/mole to 1,000,000 grams/mole.
Claims10
An aqueous composition useful for polishing silica and boro-phosphate-silicate-glass on a semiconductor wafer comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole.
A method for polishing silica and boro-phosphate-silicate-glass on a semiconductor wafer comprising:
- contacting the silica and silicon nitride on the wafer with a polishing composition, the polishing composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole;
- and
- polishing the silica and boro-phosphate-silicate-glass with a polishing pad.
Dependencies are inferred from the claim text.