Bottom electrode of metal-insulator-metal capacitor and method of fabricating the same

A method of fabricating a bottom electrode of a MIM capacitor, comprising:

• forming a transition metal layer on a substrate;
• forming a self-assembling polymer film comprising a nano-pattern on the transition metal layer and exposing a portion of the transition metal layer;
• treating the exposed portion of the transition metal layer using the self-assembling polymer film as a mask such that the exposed portion of the transition metal layer undergoes a phase change;
• and
• removing the self-assembling polymer film.

A metal-insulator-metal (MIM) capacitor, comprising:

• a conductive layer, serving as an upper electrode of a capacitor;
• a transition metal layer, located under the conductive layer and serving as a bottom electrode of the capacitor, wherein the transition metal layer includes:
• a nano-pattern area;
• and
• a phase change area, wherein a height of the nano-pattern area is lower than that of the phase change area;
• a capacitor dielectric layer, located between the conductive layer and the transition metal layer.