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AssigneeNissan Chemical Industries, Ltd.
InventorTakahiro Kishioka
Estimating the term…
There is provided an underlayer coating forming composition for lithography that is used in lithography process of manufacture of semiconductor device; and an underlayer coating having a high dry etching rate compared with photoresist. Concretely, it is a composition for forming an underlayer without use of crosslinking reaction by an strong acid catalyst, and an underlayer coating forming composition containing a component having an epoxy group (a polymer, a compound) and a component having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure (a polymer, a compound).
An underlayer coating forming composition characterized by comprising a polymer compound having an epoxy group and a polymer compound having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure.
An underlayer coating forming composition characterized by comprising a polymer compound having an epoxy group and a compound with a molecular weight of 2000 or less having at least two phenolic hydroxyl groups, carboxyl groups, protected carboxyl groups or acid anhydride structures.
An underlayer coating forming composition characterized by comprising a compound with a molecular weight of 2000 or less having at least two epoxy groups and a polymer compound having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure.
An underlayer coating forming composition characterized by comprising a polymer compound having a phenolic hydroxyl group, a carboxyl group, a protected carboxyl group or an acid anhydride structure and an epoxy group.
Dependencies are inferred from the claim text.