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US 2006/0223329 A1Published application
Vapor HF etch process mask and method
AssigneeAnalog Devices, Inc.
InventorsJohn Martin, Timothy Brosnihan
Life of this patent
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Abstract
A method of processing a semiconductor wafer provides a wafer, and then forms an organic mask on at least a portion of the wafer. The method then applies a vapor etching process to the wafer through holes in the organic mask.
Claims20
A method of processing a semiconductor wafer, the method comprising:
- providing a wafer;
- forming an organic mask on at least a portion of the wafer, the organic mask having at least one hole;
- and
- applying a vapor etching process to the wafer through the at least one hole in the organic mask.
1 more element
A method of fabricating a micromachined product, the method comprising:
- forming microstructure supported by a wafer;
- applying an organic material to at least a portion of the wafer;
- producing a prespecified pattern of holes in the organic material to form an organic mask;
- and
- applying a vapor phase etching process to the wafer through the prespecified pattern of holes in the organic mask.
2 more elements
A method of fabricating a semiconductor device, the method comprising:
- providing a wafer;
- depositing a layer of organic material on a surface of the wafer;
- forming a supplemental mask on the layer of organic material, the mask having one or more holes therethrough;
- using the supplemental mask to form one or more holes through the layer of organic material to form an organic mask;
- and
- applying a vapor etching process to the wafer through the one or more holes in the organic mask.
3 more elements
Dependencies are inferred from the claim text.