Integrated optical metrology and lithographic process track for dynamic critical dimension control

A method for improving a yield and throughput of a lithographic process comprising the steps of:

• providing a first resist layer on a first process wafer;
• forming a first resist pattern comprising a heating process according to a first temperature profile wherein the heating process comprises a plurality of temperature controllable heating zones;
• producing and collecting scattered light spectra from the first resist pattern;
• processing the scattered light spectrum to obtain 3-dimensional information comprising first resist pattern critical dimensions;
• deriving a model functional relationship approximating a variation of the first resist pattern dimensions with respect to the first temperature profile;
• repeating the steps of providing, forming, producing, and processing with respect to a second resist layer comprising a production process wafer;
• determining a second temperature profile for performing the heating process to achieve targeted resist pattern critical dimensions comprising production process wafers upstream of the heating process according to the model functional relationship;
• and,
• repeating the steps of providing, forming, producing, processing and determining with respect to each of the upstream production process wafers.

A lithographic process track system including integrated optical metrology for semiconductor device manufacturing comprising:

• a lithographic process track comprising a heating process for forming a patterned resist layer on a process wafer wherein the heating process comprises a heating plate comprising a plurality of temperature controllable heating zones for heating the process wafer according to a temperature profile;
• a means for producing and collecting the scattered light spectra from the patterned resist layer;
• a means for processing the scattered light spectrum to obtain 3-dimensional information comprising the patterned resist layer pattern critical dimensions;
• and,
• a means for determining a second temperature profile for performing the heating process to achieve targeted resist pattern critical dimensions comprising a second resist pattern on a second process wafer;
• and,
• a means for communicating the second temperature profile to the plurality of temperature controllable heating zones to carry out the heating process on the second resist pattern according to the second temperature profile.

A lithographic process track system including integrated optical metrology for semiconductor device manufacturing comprising:

• a lithographic process track comprising a heating process for forming a patterned resist layer on a process wafer wherein the heating process comprises a heating plate comprising a plurality of temperature controllable heating zones for heating the process wafer according to a temperature profile in communication with a controller;
• a means for producing and collecting the scattered light spectra from the patterned resist layer in communication with the controller;
• a means for processing the scattered light spectrum to obtain 3-dimensional information comprising the patterned resist layer pattern critical dimensions in communication with the controller;
• and,
• programmed instructions executable by the controller for determining a second temperature profile for performing the heating process to achieve targeted resist pattern critical dimensions comprising a second resist pattern on a second process wafer;
• and,
• wherein the controller is in communication with the plurality of temperature controllable heating zones for communicating and executing the second temperature profile to carry out the heating process on the second resist pattern according to the second temperature profile.