Methods of forming patterns in substrates
AssigneeMicron Technology, Inc.
InventorRobert Terhune
Life of this patent
Estimating the term…
Abstract
The invention includes methods of forming a pattern in a substrate. A feature location is defined where a square corner is desired to be patterned into the substrate. A mask is generated which is to be utilized in creating a substantially square corner at the feature location. The mask has a linear sub-resolution component extending across the feature location. Radiation is provided through the mask to pattern the substantially square corner at the feature location.
Claims33
A method of forming a pattern in a substrate, comprising:
- defining a feature location of the substrate where a square corner is desired to be patterned into the substrate;
- generating a mask to utilize in creating a substantially square corner at the feature location, the mask having a linear sub-resolution component extending across the feature location;
- and
- providing radiation through the mask to pattern the substantially square corner at the feature location.
A method of forming a pattern in a substrate, comprising:
- defining a first feature location of the substrate where an end of a first segment is desired to be patterned into the substrate, defining a second feature location of the substrate where an end of a second segment is desired to be patterned into the substrate;
- and defining an expanse of the substrate extending between the first and second feature locations;
- generating a mask to utilize in creating the ends of the first and second segments at said first and second locations, the mask having a bridge extending entirely across the first and second feature locations and having a sub-resolution component along a side of the bridge, the sub-resolution component being a linear segment that also extends entirely across the first and second feature locations, the sub-resolution component and bridge differing in transparency relative to one another;
- and
- providing radiation through the mask to pattern the ends of the first and second segments.
A method of forming a pattern in a substrate, comprising:
- defining a first feature location of the substrate where an end of a first segment is desired to be patterned into the substrate, defining a second feature location of the substrate where an end of a second segment is desired to be patterned into the substrate;
- and defining an expanse of the substrate extending between the first and second feature locations;
- generating a mask to utilize in creating the ends of the first and second segments at said first and second locations, the mask having an opening extending entirely across the first and second feature locations and having a sub-resolution component within the opening and over a portion of the expanse, the sub-resolution component being a ribbon of the opening extending an entire length of the expanse;
- and
- providing radiation through the mask to pattern the ends of the first and second segments.
A method of forming a pattern in a substrate, comprising:
- defining an intersection location of the substrate where an intersection is desired to be patterned into the substrate;
- the intersection comprising at least one corner that is desired to be patterned into the substrate as a substantially 90 degree corner;
- the intersection having a plurality of inlet/outlet segments joining at a polygonal body region;
- generating a mask to utilize in creating the intersection at the intersection location, the mask having a first section extending across an inlet/outlet segment, a second section extending across the polygonal body region, and a linear sub-resolution component separating the first section from the second section;
- the first and second sections having a first transparency, and the sub-resolution component having a second transparency which is different from the first transparency;
- and
- providing radiation through the mask to pattern the intersection with the at least one substantially 90 degree corner.
A method of forming a pattern in a substrate, comprising:
- defining an intersection location of the substrate where an intersection is desired to be patterned into the substrate;
- the intersection comprising at least one corner that is desired to be patterned into the substrate as a substantially 90 degree corner;
- the intersection comprising a plurality of inlet/outlet segments joining at a polygonal body region;
- generating a mask to utilize in creating the intersection at the intersection location, the mask having an opening entirely across the intersection location except for one or more sub-resolution components within the opening;
- the one or more sub-resolution components being linear segments at one or more portions of the mask corresponding to interfaces between inlet/outlet segments and the substantially polygonal body region;
- and
- providing radiation through the mask to pattern the intersection with the at least one substantially 90 degree corner.
Dependencies are inferred from the claim text.