Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate formed with a trench and having a surface;
• an element isolation region formed by burying a first insulating film in the trench;
• an element forming area divided by the element isolation region on an area of the surface of the semiconductor substrate, the element forming area having an upper side and an electrode forming area;
• a second insulating film formed on the upper side of the element forming area;
• and
• a connecting hole defined in the second insulating film so as to correspond to the electrode forming area of the element forming area,
• wherein a part of the element forming area in which the connecting hole is formed has a surface which is curved so that a central part thereof is located higher than an interface between the element isolation region and the element forming area.

A method of manufacturing a semiconductor device, comprising:

• forming a trench in a semiconductor substrate and burying an element isolation insulating film in the trench, thereby forming an element isolation region;
• forming a gate electrode in an element forming area isolated by the element isolation region;
• etching the element forming area so that a surface thereof is inclined so as to be lowered from a central part thereof toward an interface between the element isolation region and the element forming area;
• forming an interlayer insulating film;
• forming a connecting hole;
• and
• burying an electrode material in the connecting hole, thereby forming an electrode.