Method for forming metal line
OwnerYun-Seok Choinventor
Life of this patent
Estimating the term…
Abstract
A method for forming a metal line is provided. The method includes: forming a metal structure with a specific grain size on a substrate; forming a first hard mask layer on the metal structure; forming a second hard mask layer on the first hard mask layer; forming a photoresist pattern on the second hard mask layer; etching the second hard mask layer using the photoresist pattern as an etch barrier, thereby obtaining first hard masks; etching the first hard mask layer using the first hard masks as an etch barrier, thereby obtaining second hard masks; and etching the metal structure using the first hard masks as an etch barrier.
Claims15
A method for forming a metal line in a semiconductor device, comprising:
- forming a metal structure on a substrate;
- forming a first hard mask layer on the metal structure;
- forming a second hard mask layer on the first hard mask layer;
- forming a photoresist pattern on the second hard mask layer;
- etching the second hard mask layer using the photoresist pattern as an etch barrier, to form first hard masks;
- etching the first hard mask layer using the first hard masks as an etch barrier, to form second hard masks;
- and
- etching the metal structure using the first hard masks as an etch barrier.
Dependencies are inferred from the claim text.