Method of forming pattern
AssigneeKabushiki Kaisha Toshiba
InventorsOsamu Miyagawa, Hideki Oguma
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Abstract
A method of forming a pattern, including forming first and second films, and a resist film on the second film, patterning the resist film to form a first pattern, etching the first pattern to narrow a width of the lines of the first pattern, etching the second film by using the first pattern as a mask to form a second pattern having a configuration of the first pattern transferred thereto, forming a third film above the substrate to cover the second pattern, filling a recessed portion of the third film corresponding to a gap between the lines of the second pattern with a fourth film, and removing a portion of the third film which is located on opposite sides of the fourth film, and a portion of the first film which is located below the third film to form a third pattern.
Claims20
A method of forming a pattern, comprising:
- forming a first film and a second film successively on a main surface of a substrate;
- forming a resist film on the second film;
- patterning the resist film to form a first pattern having lines;
- subjecting the first pattern to an etching treatment to narrow a width of the lines of the first pattern;
- etching the second film by making use of the first pattern having the lines with narrowed width as a mask to form a second pattern having a configuration of the first pattern transferred thereto;
- forming a third film above the substrate to cover the second pattern;
- filling a recessed portion of the third film which corresponds to a gap between the lines of the second pattern with a fourth film;
- and
- removing, through etching, not only a portion of the third film which is located on opposite sides of the fourth film but also a portion of the first film which is located below the third film to form a third pattern.
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating film and a gate electrode film successively on a main surface of a substrate;
- forming a first film and a second film successively on the gate electrode film;
- forming a resist film on the second film;
- patterning the resist film to form a first pattern having lines;
- subjecting the first pattern to an etching treatment to narrow a width of the lines of the first pattern;
- etching the second film by making use of the first pattern having the lines with narrowed width as a mask to form a second pattern having a configuration of the first pattern transferred thereto;
- forming a third film above the substrate to cover the second pattern;
- filling a recessed portion of the third film which corresponds to a gap between the lines of the second pattern with a fourth film;
- removing, through etching, not only a portion of the third film which is located on opposite sides of the fourth film but also a portion of the first film which is located below the third film to form a third pattern;
- and
- etching the gate electrode film by making use of the third pattern as a mask to form a gate electrode.
Dependencies are inferred from the claim text.