Organic-framework zeolite interlayer dielectrics
AssigneeIntel Corporation
InventorsMichael Goodner, Mansour Moinpour, Grant Kloster, Boyan Boyanov
Life of this patent
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Abstract
An organic-framework zeolite interlayer dielectric is disclosed. The interlayer dielectric's resistance to chemical attack, its dielectric constant, its mechanical strength, or combinations thereof can be tailored by (1) varying the ratio of carbon-to-oxygen in the organic-framework zeolite, (2) by including tetravalent atoms other than silicon at tetrahedral sites in the organic-framework zeolite, or (3) by including combinations of pentavalent/trivalent atoms at tetrahedral sites in the organic-framework zeolite.
Claims22
An interlayer dielectric comprising an organic-framework zeolite.
A semiconductor device comprising a dielectric layer that includes an organic-framework zeolite, wherein the organic framework zeolite includes silicon, oxygen, and carbon in a primary building unit.
A method for forming a semiconductor device comprising:
- forming a first interconnect level;
- forming an interlayer dielectric that includes an organic-framework zeolite over the first interconnect level;
- forming a second interconnect level, wherein portions of the first interconnect level are spaced apart from portions of the second interconnect level by portions of the interlayer dielectric.
A method for forming a semiconductor device comprising forming an interlayer dielectric that includes an organic-framework zeolite over a semiconductor substrate.
Dependencies are inferred from the claim text.