Dummy via for reducing proximity effect and method of using the same

A semiconductor device, comprising:

• a dielectric layer on a substrate;
• a dual damascene structure filled with a conductive material and inlaid in said dielectric layer;
• and
• a dummy via structure filled with an SOG (spin on glass) coating or a TEOS-based dielectric material and inlaid in said dielectric layer, wherein said dummy via structure comprises at least two dummy vias filled with said SOG (spin on glass) coating or a TEOS-based dielectric material and located adjacent to two sides of said dual damascene structure respectively.

A semiconductor device, comprising:

• a dielectric layer on a substrate, having dielectric constant less than 4.0;
• a dual damascene structure filled with a conductive material and inlaid in said dielectric layer;
• and
• a dummy via structure filled with a non-conductive material and inlaid in said dielectric layer, wherein said dummy via structure comprises at least two dummy vias filled with said non-conductive material and located adjacent to two sides of said dual damascene structure respectively.