Semiconductor device having GaN-based semiconductor layer
AssigneeEudyna Devices Inc.
InventorsTakeshi Kawasaki, Ken Nakata, Hiroshi Yano
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Abstract
A semiconductor device includes, an AlGaN electron supply layer having a [000-1] crystalline orientation in a thickness direction to a substrate plane, a GaN electron traveling layer formed on the AlGaN electron supply layer, a gate electrode formed above the GaN electron traveling layer, and a source electrode and a drain electrode between which the gate electrode is located, the source and drain electrode being formed on the GaN electron traveling layer.
Claims20
A semiconductor device comprising:
- an AlGaN electron supply layer having a (000-1] crystalline orientation in a thickness direction to a substrate plane;
- a GaN electron traveling layer formed on the AlGaN electron supply layer;
- a gate electrode formed above the GaN electron traveling layer;
- and
- a source electrode and a drain electrode between which the gate electrode is located, the source and drain electrode being formed on the GaN electron traveling layer.
A method of fabricating a semiconductor device comprising:
- forming by MOCVD in order of an AlGaN electron supply layer and a GaN electron traveling layer having a (000-1] crystalline orientation in a thickness direction to a substrate plane;
- forming a gate electrode above the GaN electron traveling layer;
- and
- forming a source electrode and a drain electrode on the GaN electron traveling layer so that the gate electrode is located between the source and drain electrodes.
A substrate for fabricating a semiconductor device comprising:
- a grown substrate for growing a semiconductor layer thereon, the growth substrate having a main surface that is a (000-1) plane;
- and
- a GaN-based semiconductor layer grown on the growth substrate in a [000-1] crystalline orientation.
A method of fabricating a substrate comprising:
- forming a GaN-based semiconductor layer on a growth substrate having a main surface of a (000-1) plane in a [000-1] crystalline orientation by MOCVD.
A substrate having a (000-1) plane that is a main surface serving as a growth surface on which a GaN semiconductor layer is grown in a [000-1] crystalline orientation.
Dependencies are inferred from the claim text.