Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor

The integrated high voltage capacitor as recited in claim 14 wherein the metal rings are floating, and thereby not electrically connected to other features of the integrated high voltage capacitor.

The method as recited in claim 16 wherein providing electrical connection includes etching a first distance into one or both of the protective overcoat and the upper most interlevel dielectric layer using a first patterned photoresist layer, but not through the upper most interlevel dielectric layer, removing the first patterned photoresist layer, and then etching through the upper most interlevel dielectric layer using a second patterned photoresist layer.

An integrated circuit chip, comprising:

• one or more transistors located over or in a semiconductor substrate, the one or more transistor having one or more interlevel dielectric layers located thereover;
• and
• a high voltage capacitor including a first capacitor plate, an insulator and a second capacitor plate located at least partially in or over the semiconductor substrate, wherein at least one of the one or more interlevel dielectric layers forms at least a portion of the insulator, and further wherein capacitance uniformity structures are located at least partially within the insulator.