Monolithically integrated capacitor and method for manufacturing thereof

Abstract

A monolithically integrated capacitor having a variable capacitance, comprising a first semiconductor region structure doped to a first doping type, a second semiconductor region structure doped to a second doping type opposite the first doping type, a first electrode of the capacitor connected to the semiconductor region structure, and a second electrode of the capacitor connected to the second semiconductor region structure. The second semiconductor region structure is located in contact with, and laterally arranged at least on two opposite sides of, the first semiconductor region structure, and a boundary, preferably a planar boundary, between the first and second semiconductor region structures is angled with respect to a plane having a laterally directed normal. Preferably, the second semiconductor region structure is partly or completely surrounding the first semiconductor region structure in a lateral plane.

Dependencies are inferred from the claim text.