Nonvolatile memory device and method of fabricating the same

A nonvolatile memory device comprising:

• a semiconductor substrate;
• a gate structure having sidewalls formed on the semiconductor substrate, the gate structure including a first insulating pattern formed on the semiconductor substrate, a storage node pattern formed on the first insulating pattern;
• a second insulating pattern formed on the storage node layer, a third insulating pattern formed on the second insulating pattern, and a control gate electrode formed on the third insulating pattern;
• and
• source and drain regions formed in the semiconductor substrate adjacent the sidewalls of the gate structure.

A method of fabricating a nonvolatile memory device, comprising:

• forming a first insulating layer on a semiconductor substrate;
• forming a storage node layer on the first insulating layer;
• forming a second insulating layer on the storage node layer;
• forming a third insulating film on the second insulating layer;
• forming a control gate electrode layer on the third insulating layer;
• forming a photoresist pattern that exposes predetermined portions of a surface of the control gate electrode layer;
• and
• forming a gate structure by etching the control gate electrode layer, the third insulating layer, the second insulating layer, the storage node layer, and the first insulating layer using the photoresist pattern as an etching mask.