Versatile system for cross-lateral junction field effect transisor

A method of forming a junction field effect transistor, the method comprising the steps of:

• providing a substrate;
• forming a channel structure along the substrate;
• forming a first gate structure along the substrate laterally adjoining a first side of the first channel structure;
• forming a second gate structure along the substrate laterally adjoining a second side of the first channel structure opposite the first gate structure;
• forming a first source structure along the substrate laterally adjoining a third side of the first channel structure, orthogonal to the first and second gate structures;
• and
• forming a first drain structure along the substrate laterally adjoining a fourth side of the first channel structure, opposite the first source structure and orthogonal to the first and second gate structures.

A system for providing a junction field effect transistor having desired voltage, frequency or current characteristics, the system comprising:

• providing a substrate;
• forming a channel structure along the substrate;
• forming a dual-gate structure along the substrate, laterally adjoining the channel structure on opposite sides thereof;
• forming a source structure along the substrate, laterally adjoining the channel structure orthogonal to the dual-gate structure;
• and
• forming a drain structure along the substrate, laterally adjoining the channel structure, opposite the source structure and orthogonal to the dual-gate structures.