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US 2006/0141797 A1Published application
Method for fabricating semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsKi-Won Nam, Jae-Young Kim
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Abstract
A method for fabricating a semiconductor device is provided. The method includes: forming device isolation layers on a substrate; sequentially forming an anti-reflective coating layer and a photoresist layer on the substrate; patterning the anti-reflective coating layer and the photoresist layer to expose substrate regions in which active regions of a metal oxide semiconductor (MOS) transistor will be formed; and recessing the exposed substrate regions in a predetermined thickness.
Claims10
A method for fabricating a semiconductor device, comprising:
- forming device isolation layers on a substrate;
- sequentially forming an anti-reflective coating layer and a photoresist layer on the substrate;
- patterning the anti-reflective coating layer and the photoresist layer to expose substrate regions in which active regions of a metal oxide semiconductor (MOS) transistor will be formed;
- and
- recessing the exposed substrate regions in a predetermined thickness.
2 more elements
Dependencies are inferred from the claim text.