Method for fabricating a semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorJi Yune
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Abstract
The method includes chemical-mechanical polishing to planarize an insulating interlayer deposited on a lower pattern. The insulating interlayer is polished using a surfactant. The chemical-mechanical polishing includes at least two separate polishing steps of different fluxes of the surfactant. The first polishing step is performed for touching up an upper side of the insulating layer. The second polishing step is performed, after completing the first polishing step, for planarizing the insulating interlayer.
Claims11
A method for fabricating a semiconductor device, comprising:
- chemical-mechanical polishing an insulating interlayer deposited on a lower pattern using a surfactant, said chemical-mechanical polishing including at least two separate polishing steps having different fluxes of the surfactant.
A method for fabricating a semiconductor device, comprising:
- a first polishing step for touching up an upper side of an insulating interlayer deposited on a pattern;
- and
- a second polishing step for planarizing the insulating interlayer,
- wherein the first and second polishing steps are performed at different values of a flux of a surfactant.
A method for manufacturing a semiconductor device, comprising:
- forming a pattern on a substrate;
- depositing an insulating interlayer on the pattern;
- performing a first polishing step for touching up an upper side of the insulating interlayer;
- and
- performing a second polishing step for planarizing the insulating interlayer,
- wherein the first and second polishing steps are performed at different values of a flux of a surfactant.
Dependencies are inferred from the claim text.