Method of forming electrical connections in a semiconductor structure
OwnerHolger Schuehrer, Matthias Schaller +1inventors
InventorsHolger Schuehrer, Matthias Schaller, Christin Bartsch
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Abstract
A method of forming a semiconductor structure comprises providing a substrate comprising a layer of a material formed on a first surface of the substrate. At least one recess is formed in the layer of material. The formation of the at least one recess comprises performing a dry etching process. A contamination layer formed in the dry etching process is removed from a second surface of the substrate. Thus, contaminations of tools used in later stages of the manufacturing process resulting from flakes splitting off the contamination layer may be avoided.
Claims24
A method of forming a semiconductor structure, comprising:
- providing a substrate comprising a layer of a material formed on a first surface of said substrate;
- performing at least one dry etching process to form at least one recess in said layer of material;
- and
- removing a contamination layer formed in said dry etching process from a second surface of said substrate.
A method of forming a semiconductor structure, comprising:
- providing a substrate comprising a layer of an interlayer dielectric formed over a front side of said substrate;
- performing at least one dry etching process to form at least one recess in said layer of interlayer dielectric;
- and
- removing a polymer layer formed during said at least one dry etching process from a backside of said substrate.
Dependencies are inferred from the claim text.