Methods for forming semiconductor structures
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsCecile Delattre, Frederic Metral, Daniel Delprat, Christophe Maleville
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Abstract
The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.
Claims18
A method for forming a semiconductor-on-insulator structure by transfer of a layer from a donor substrate to a receiver substrate, which comprises:
- providing each of a donor substrate and a receiving substrate with a bonding surface for bonding the substrates together;
- providing in the donor substrate a weakened zone that defines the layer to be transferred;
- activating at least one of the bonding surfaces by applying an activation solution comprising a solution of ammonia (NH4OH) in water in a concentration by weight in the range from about 0.05% to 2% in order to enhance bonding energy between the substrates;
- bonding the donor and receiving substrates together by contacting the at least one activated surface and the other surface;
- and
- detaching the layer at the weakened zone to transfer it to the receiving substrate.
The method of claim 7 wherein the chelating agents or surfactants are present in the activator solution in an amount of about 3%.
Dependencies are inferred from the claim text.