Method of manufacturing flash memory device
AssigneeHynix Semiconductor Inc.
InventorsSeung Lee, Sang Park
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a flash memory device wherein before an insulating film spacer of a contact region is removed after a gate line and source/drain are formed, a high quality buffer oxide film formed between the gate line and the insulating film spacer is made dense by means of an annealing process. Abnormal oxidization is thus prevented from occurring due to an exposed metal layer in a gate when the insulating film spacer is removed as at least part of the buffer oxide remains after the spacer is removed.
Claims18
A method of manufacturing a flash memory device, comprising:
- forming a gate line on a semiconductor substrate;
- sequentially forming a buffer oxide film and a nitride film on the gate line;
- etching the nitride film by means of a blanket etch process, thereby forming an insulating film spacer;
- forming impurity regions in the semiconductor substrate by using the gate line and the insulating film spacer as an ion implant mask;
- performing an annealing process to densify the buffer oxide film;
- removing the insulating film spacer;
- and
- performing a self-aligned contact process.
A method of manufacturing a flash memory device, comprising:
- forming a gate line on a semiconductor substrate;
- sequentially forming a buffer oxide film and a nitride film on the gate line;
- etching the nitride film by means of a blanket etch process, form an insulating film spacer from a remaining portion of the nitride film;
- forming impurity regions in the semiconductor substrate by using the gate line and the insulating film spacer as an ion implant mask;
- performing an annealing process to densify the buffer oxide film;
- removing the insulating film spacer without removing the buffer oxide film.
A method of manufacturing a flash memory device, comprising:
- forming a gate line on a semiconductor substrate;
- sequentially forming a buffer oxide film and a nitride film over the gate line;
- etching the nitride film by means of a blanket etch process, thereby forming an insulating film spacer on top of the buffer oxide film;
- forming impurity regions in the semiconductor substrate by using the gate line and the insulating film spacer as an ion implant mask;
- performing an annealing process to densify the buffer oxide film;
- removing the insulating film spacer without removing all of the buffer oxide film.
Dependencies are inferred from the claim text.