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US 2006/0138587 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeDongbuAnam Semiconductor Inc.
InventorChee-Hong Choi
Life of this patent
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Abstract
An semiconductor device and a manufacturing method minimizes the inductor area in a high frequency device by forming an inductor with a vertical spiral geometry. Accordingly, the device can be highly integrated. In addition, the inductor area overlapped with various devices on a substrate can be minimized so as to prevent deterioration of the electrical characteristics of the inductor.
Claims14
A semiconductor device, comprising:
- a lower metal line formed on a substrate;
- a first column portion formed at a first location on the lower metal line, the first column portion comprising at least one first metal plug and at least one first intermediate metal block, wherein a lowest one of the at least one first metal plug and the at least one first intermediate metal block is connected to the lower metal line;
- a second column portion formed at a second location on the lower metal line, the second column portion comprising at least one second metal plug and at least one second intermediate metal block, wherein a lowest one of the at least one second metal plug and the at least one second intermediate metal block is connected with the lower metal line;
- a third column portion formed at a third location between the first and second locations, the third column portion comprising at least one third metal plug and at least one third intermediate metal block, wherein the third column portion is separated from the lower metal line;
- and
- an upper metal block connecting the third column portion with one of the first and second column portions at a top position thereof.
3 more elements
A manufacturing method of a semiconductor device, comprising:
- forming a first insulation layer on a substrate;
- forming a first trench on the substrate by selectively etching the first insulation layer;
- forming a lower metal line by filling the first trench with a conductive material;
- forming a second insulation layer on the first insulation layer;
- selectively etching the second insulation layer at first and second locations forming a plurality of second trenches and a plurality of first contact holes;
- forming a plurality of intermediate metal blocks by filling the first contact holes and the second trenches with a conductive material;
- forming a third insulation layer on the second insulation layer and the intermediate metal blocks;
- selectively etching the third insulation layer so as to form a plurality of second contact holes and a common trench, the common trench interconnecting an adjacent pair of the second contact holes;
- and
- forming an upper metal block by filling the plurality of second contact holes and the common trench with a conductive material.
7 more elements
A semiconductor device comprising a substrate and an inductor formed above the substrate, wherein:
- the inductor comprises a plurality of metal plugs and metal blocks;
- and
- the inductor is formed to have a vertical spiral profile.
Dependencies are inferred from the claim text.