Manufacturing process for a stacked structure comprising a thin layer bonding to a target substrate

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein the target substrate is only a temporary support for the thin layer, the said steps in the process are entirely or partly repeated, and the target substrate is treated as the initial substrate or the intermediate support.

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein steps a) and c) are such that a roughness of the first contact face of the thin layer and/or the intermediate support is less than a roughness of its second contact face and/or the target substrate, the compatibility of the structure in step d) being obtained by putting the second contact face into bonding contact with the thin layer and by removal of the intermediate support.

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein the structure compatibility achieved in step d) is obtained by creating a bonding contact of the second contact face of the thin layer with the target substrate with a bonding energy that enables removal of the target substrate after step e).

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein an intermediate step is carried out between step c) and step d), consisting of making elements in the second contact face of the thin layer and/or the target substrate, the structure obtained after step d) being compatible with the presence of the said elements.

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein:
• step a) includes the introduction of gaseous species into the initial substrate through one of its faces corresponding to the first said contact face, to form a weakened layer separating the said film from the rest of the initial substrate and possibly leading to a fracture of the initial substrate during step c);
• and
• step c) consists of making a treatment to form a fracture in the initial substrate at a weakened layer.

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein at least part of the intermediate support is removed by the introduction of gaseous species either through the thin layer after creating a contact, or through the contact face of the intermediate support before or after putting it into bonding contact with the first contact face of the thin layer, this addition of gaseous species forming a weakened layer enabling the removal of all or part of the intermediate support.

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein there is used an SiC or GaAs initial substrate, an SiC or GaAs intermediate support, an SiC or GaAs target substrate with a lower quality than the initial substrate material, the thin layer containing SIC or GaAs originating from the initial substrate.

A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, comprising the following steps:

• a) formation of a thin layer starting from an initial substrate, the thin layer having a free face called the first contact face;
• b) putting the first contact face into bonding contact with a face of an intermediate support, the structure obtained being compatible with later thinning of the initial substrate;
• c) thinning of the said initial substrate to expose a free face of the thin layer called the second contact face and opposite the first contact face;
• d) putting a face of a target substrate into bonding contact with at least part of the second contact face, the structure obtained being compatible with later removal of all or some of the intermediate support;
• and
• e) removal of at least part of the intermediate support in order to obtain the said stacked structure,
• wherein the thin layer is a layer of a material from Si, GaN, SiC, LiNbO3, Ge, GaAS, InP, sapphire and semiconductors.