Method for fabricating electronic device

A method for fabricating an electronic device including a transistor with a drain extension structure, the method comprising the steps of:

• previously obtaining a correspondence between a size of a gate electrode of the transistor and heat treatment conditions for forming the drain extension structure, the correspondence satisfying that a threshold voltage of the transistor is at a given level;
• forming the gate electrode;
• measuring the size of the gate electrode;
• performing ion implantation for forming the drain extension structure;
• setting heat treatment conditions for forming the drain extension structure, based on the previously-obtained correspondence and the measured size of the gate electrode;
• and
• performing heat treatment for forming the drain extension structure under the heat treatment conditions that have been set, after the step of performing the ion implantation.

A method for fabricating an electronic device including a transistor with a drain extension structure, the method comprising the steps of:

• previously obtaining a first correspondence between a size of a gate electrode of the transistor and ion implantation conditions for forming the drain extension structure, the first correspondence satisfying that a threshold voltage of the transistor is at a given level;
• previously obtaining a second correspondence between the size of the gate electrode and heat treatment conditions for forming the drain extension structure, the second correspondence satisfying that the threshold voltage is at the given level;
• forming the gate electrode;
• measuring the size of the gate electrode;
• setting ion implantation conditions for forming the drain extension structure, based on the previously-obtained first correspondence and the measured size of the gate electrode;
• performing ion implantation for forming the drain extension structure under the ion implantation conditions that have been set;
• setting heat treatment conditions for forming the drain extension structure, based on the previously-obtained second correspondence and the measured size of the gate electrode;
• and
• performing heat treatment for forming the drain extension structure under the heat treatment conditions that have been set, after the step of performing the ion implantation.

A method for fabricating an electronic device including an n-transistor with a drain extension structure and a p-transistor with a drain extension structure, the method comprising the steps of:

• previously obtaining a first correspondence between a size of a gate electrode of the n-transistor and ion implantation conditions for forming the drain extension structure of the n-transistor, the first correspondence satisfying that the n-transistor has a given threshold voltage;
• previously obtaining a second correspondence between a size of a gate electrode of the p-transistor and heat treatment conditions for forming the drain extension structure of the p-transistor, the second correlation satisfying that the p-transistor has the given threshold voltage;
• forming the gate electrodes of the respective n- and p-transistors;
• measuring the sizes of the gate electrodes of the respective n- and p-transistors;
• setting ion implantation conditions for forming the drain extension structure of the n-transistor, based on the previously-obtained first correspondence and the measured size of the gate electrode of the n-transistor;
• performing first ion implantation for forming the drain extension structure of the n-transistor under the ion implantation conditions that have been set;
• performing second ion implantation for forming the drain extension structure of the p-transistor;
• setting heat treatment conditions for forming the drain extension structure of the p-transistor, based on the previously-obtained second correspondence and the measured size of the gate electrode of the p-transistor;
• and
• performing heat treatment for forming the drain extension structures of the n- and p-transistors under the heat treatment conditions that have been set, after the steps of performing the first ion implantation and the second ion implantation.