Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device comprising:

• forming a base film over an insulating substrate;
• forming a thin film transistor over the base film, wherein the thin film transistor includes a semiconductor layer, a gate insulating film and a gate electrode;
• forming a first interlayer insulating film over the gate insulating film and the gate electrode;
• forming a first contact hole in the first interlayer insulating film;
• forming a wiring over the first interlayer insulating film, wherein the wiring is electrically connected to the semiconductor layer through the first contact hole;
• forming a resin containing siloxane polymer over the first interlayer insulating film and the wiring;
• heating the resin in an atmosphere containing an inert gas to form a second interlayer insulating film, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming a second contact hole in the second interlayer insulating film;
• and
• forming an electrode over the second interlayer insulating film, wherein the electrode is electrically connected to the wiring through the second contact hole.

A method for manufacturing a semiconductor device comprising:

• forming a base film over an insulating substrate;
• forming an amorphous semiconductor film over the base film;
• crystallizing the amorphous semiconductor film;
• forming a semiconductor layer by pattering the crystallized semiconductor film;
• forming a gate insulating film over the semiconductor layer;
• forming a gate electrode over the gate insulating film;
• forming a first impurity region and a second impurity region by doping an impurity into the semiconductor layer;
• forming a first interlayer insulating film over the gate insulating film and the gate electrode;
• forming a first contact hole in the first interlayer insulating film;
• forming a wiring over the first interlayer insulating film, wherein the wiring is electrically connected to the first impurity region through the first contact hole;
• forming a resin containing siloxane polymer over the first interlayer insulating film and the wiring;
• heating the resin in an atmosphere containing an inert gas to form a second interlayer insulating film, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming a second contact hole in the second interlayer insulating film;
• and
• forming an electrode over the second interlayer insulating film, wherein the electrode is electrically connected to the wiring through the second contact hole.

A method for manufacturing a semiconductor device comprising:

• forming a base film over an insulating substrate;
• forming a thin film transistor over the base film, wherein the thin film transistor includes a semiconductor layer, a gate insulating film and a gate electrode;
• forming a first interlayer insulating film over the gate insulating film and the gate electrode;
• forming a first contact hole in the first interlayer insulating film;
• forming a wiring over the first interlayer insulating film, wherein the wiring is electrically connected to the semiconductor layer through the first contact hole;
• forming a resin containing siloxane polymer over the first interlayer insulating film and the wiring;
• first heating the resin in an atmosphere containing an inert gas to form a second interlayer insulating film, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming a second contact hole in the second interlayer insulating film;
• forming an electrode over the second interlayer insulating film, wherein the electrode is electrically connected to the wiring through the second contact hole;
• and
• second heating the resin in an atmosphere containing an inert gas, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less.

A method for manufacturing a semiconductor device comprising:

• forming a base film over an insulating substrate;
• forming a thin film transistor over the base film, wherein the thin film transistor includes a semiconductor layer, a gate insulating film and a gate electrode;
• forming a first interlayer insulating film over the gate insulating film and the gate electrode;
• forming a first contact hole in the first interlayer insulating film;
• forming a wiring over the first interlayer insulating film, wherein the wiring is electrically connected to the semiconductor layer through the first contact hole;
• forming a resin containing siloxane polymer over the first interlayer insulating film and the wiring;
• first heating the resin in an atmosphere containing an inert gas to form a second interlayer insulating film, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming a second contact hole in the second interlayer insulating film;
• forming a first electrode over the second interlayer insulating film, wherein the first electrode is electrically connected to the wiring through the second contact hole;
• second heating the resin in an atmosphere containing an inert gas, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming an insulating film to cover a portion of the first electrode;
• third heating the resin in an atmosphere containing an inert gas, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming an electroluminescent layer to cover a region of the first electrode, which is not covered with the insulating film;
• and
• forming a second electrode over the electroluminescent layer.

A method for manufacturing a semiconductor device comprising:

• forming a base film over an insulating substrate;
• forming an amorphous semiconductor film over the base film;
• crystallizing the amorphous semiconductor film;
• forming a semiconductor layer by patterning the crystallized semiconductor film;
• forming a gate insulating film over the semiconductor layer;
• forming a gate electrode over the gate insulating film;
• forming a first impurity region and a second impurity region by doping an impurity into the semiconductor layer;
• forming an inorganic insulating material over the gate insulating film and the gate electrode;
• forming a resin containing siloxane polymer over the inorganic insulating material;
• heating the resin in an atmosphere containing an inert gas, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming a contact hole in the inorganic insulating material and the resin;
• and
• forming a wiring over the inorganic insulating material and resin, wherein the wiring is electrically connected to the first impurity region through the contact hole.

A method for manufacturing a semiconductor device comprising:

• forming a base film over an insulating substrate;
• forming an amorphous semiconductor film over the base film;
• crystallizing the amorphous semiconductor film;
• forming a semiconductor layer by patterning the crystallized semiconductor film;
• forming a gate insulating film over the semiconductor layer;
• forming a gate electrode over the gate insulating film;
• forming a first impurity region and a second impurity region by doping an impurity into the semiconductor layer;
• forming an inorganic insulating material over the gate insulating film and the gate electrode;
• forming a resin containing siloxane polymer over the inorganic insulating material;
• heating the resin in an atmosphere containing an inert gas, wherein the atmosphere has an oxygen concentration of 5% or less and a water concentration of 1% or less;
• forming a contact hole in the inorganic insulating material and the resin;
• forming a wiring over the inorganic insulating material and the resin, wherein the wiring is electrically connected to the first impurity region through the contact hole;
• and
• forming an electrode which overlaps a portion of the wiring.