Semiconductor probe, method of manufacturing the same, and method and apparatus for analyzing semiconductor surface using semiconductor probe

A method of manufacturing a semiconductor probe, comprising:

• forming a hard mask layer on a substrate doped at a low concentration and patterning the hard mask layer into a predetermined shape at a region where a semiconductor tip will be formed;
• etching the substrate underlying the hard mask layer and forming the semiconductor tip;
• doping a portion of the substrate not blocked by the hard mask layer with high concentration impurities and forming a conductive area;
• and
• removing the hard mask layer and sharpening the semiconductor tip.

A method of manufacturing a semiconductor probe, comprising:

• forming a hard mask layer on a substrate and patterning the hard mask layer into a predetermined shape at a region where a semiconductor tip will be formed;
• etching the substrate underlying the hard mask layer and forming the semiconductor tip;
• doping a portion of the substrate not blocked by the hard mask layer with high concentration impurities and forming a conductive area;
• and
• removing the hard mask layer, doping the semiconductor tip with a low concentration of impurities, and sharpening the semiconductor tip.

A method of manufacturing a semiconductor probe, comprising:

• depositing a semiconductor tip layer doped with impurities at a low concentration on a substrate;
• forming a hard mask layer on the semiconductor tip layer and patterning the hard mask layer into a predetermined shape at a region where a semiconductor tip will be formed;
• etching the semiconductor tip layer underlying the hard mask layer and forming the semiconductor tip;
• doping a portion of the substrate not blocked by the hard mask layer with high concentration impurities and forming a conductive area;
• and
• removing the hard mask layer and sharpening the semiconductor tip.

An apparatus for analyzing a surface of a semiconductor sample, the apparatus comprising:

• a semiconductor probe including a tip containing a low concentration of impurities and a cantilever with a conductive area doped with a high concentration of impurities, the semiconductor probe contacting and forming a PN junction with the surface of the semiconductor sample;
• a scanner moving the semiconductor probe with respect to the surface of the semiconductor sample;
• and
• a controller outputting a signal driving the scanner detecting an impurity concentration in a region on the surface of the semiconductor sample that contacts the semiconductor probe by measuring current flowing into the semiconductor sample after application to the semiconductor probe.