Loading patent…
OwnerChongying Xu, Michael Korzenski +3inventors
InventorsChongying Xu, Michael Korzenski, Thomas Baum, Alexander Borovik, Eliodor Ghenciu
Estimating the term…
Drying of patterned wafers is achieved in a manner effecting removal of water from the patterned wafers without collapse or deterioration of the pattern structures thereof. The drying is carried out in one aspect of the invention with a composition containing supercritical fluid, and at least one water-reactive agent that chemically reacts with water to form reaction product(s) more soluble in the supercritical fluid than water. Various methodologies are described for use of supercritical fluids to dry patterned wafers, which avoid the (low water solubility) deficiency of supercritical fluids such as supercritical CO2.
1-25. (canceled)
A method of drying a patterned wafer to remove water therefrom, said method comprising contacting said patterned wafer with a first composition comprising liquid CO2, and thereafter contacting the patterned substrate with a second composition comprising SCCO2, thereby effecting drying of the patterned substrate without damage to the pattern thereof.
A method of drying a patterned wafer to remove water therefrom, said method comprising (a) contacting said patterned wafer with a first composition comprising alcohol at pressure above about 1000 psi and temperature below 32° C., (b) contacting said patterned wafer with a second composition comprising an alcohol/CO2 solution, and (c) contacting the patterned substrate with a third composition comprising SCCO2, thereby effecting drying of the patterned substrate without damage to the pattern thereof.
Dependencies are inferred from the claim text.