US 2006/0065184 A1 · Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer

Abstract

The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al (aluminum) concentration is 2×1012 atoms/cc or more. Thereby, there can be provided a method of easily and inexpensively producing a P(phosphorus)-doped silicon single crystal of defect-free region having an excellent capability of electrical characteristics to be high breakdown voltage, which contains neither, for example, V region, OSF region, nor large dislocation cluster (LSEPD, LFPD) region.

Claims29

Dependent claims

1-9. (canceled)

Dependencies are inferred from the claim text.

Facts

Application

10/538,878Filed 25 Dec 2003

Priority

JP 2003-1043617 Jan 2003

Published

30 Mar 2006

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

C30B 15/203
Controlling or regulating: the relationship of pull rate to axial thermal gradient
C30B 15/04
Adding crystallising materials or reactants forming it in situ to the melt: adding doping materials, e.g. for n-p-junction
C30B 29/06
Elements: silicon
C30B
Single-crystal growth

Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer

Life of this patent

Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer

Life of this patent

Abstract

Claims29