Method of manufacturing thin film semiconductor device, and thin film semiconductor device
AssigneeSony Corporation
InventorMasafumi Kunii
Life of this patent
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Abstract
TFTs are formed on a substrate, and a layer insulation film containing no hydroxyl group in at least a lowermost layer film is formed in the state of covering the TFTs. Thereafter, a heat treatment is conducted in a moisture atmosphere, whereby oxygen or hydrogen is bound to dangling bonds present in a semiconductor thin film constituting the TFTs, and an enhancement of the denseness of the layer insulation film is contrived. The layer insulation film includes silicon nitride, for example.
Claims9
A method of manufacturing a thin film semiconductor device, comprising:
- a first step of forming a thin film transistor on a substrate;
- a second step of forming on said substrate a layer insulation film containing no hydroxyl group in at least a film constituting a lowermost layer, in the state of covering said thin film transistor;
- and
- a third step of linking oxygen or hydrogen to dangling bonds in the semiconductor thin film constituting said thin film transistor by a heat treatment in a moisture atmosphere after the formation of said layer insulation film.
A thin film semiconductor device comprising a thin film transistor containing a Group V element in a source region and a drain region of a semiconductor thin film containing silicon as a main constituent, and a layer insulation film provided on a substrate in the state of covering said thin film transistor, wherein
- at least the lowermost layer of said layer insulation film includes a silicon nitride film.
A thin film semiconductor device comprising a thin film transistor containing a Group V element in a source region and a drain region of a semiconductor thin film containing silicon as a main constituent, and a layer insulation film provided on a substrate in the state of covering said thin film transistor, wherein
- said layer insulation film has been made denser by a heat treatment in a moisture atmosphere.
Dependencies are inferred from the claim text.