Integrated semiconductor circuit and method for producing an integrated semiconductor circuit

An integrated semiconductor circuit comprising:

• means for supporting comprising a circuit;
• a plurality of wiring planes that are isolated from one another and from the means for supporting by means for insulating;
• means for conducting a signal for the circuit in the means for supporting and the wiring planes;
• a first means for contacting, comprising a first stack of metal areas in the plurality of the wiring planes and configured to connect the means for conducting the signal to a first external device during a test of the integrated semiconductor circuit;
• and
• a second means for contacting comprising a metal area in a wiring plane for connecting the signal path to second external device during normal operation of the integrated semiconductor circuit, wherein a first distance between a bottommost portion of the second means for contacting and the means for supporting is greater than a second distance between a bottommost metal area of the first stack of the first means for contacting and the means for supporting.

An integrated semiconductor circuit comprising:

• a substrate with a circuit;
• a plurality of wiring planes that are isolated from one another and from the substrate by insulator layers;
• a signal path for the circuit in the substrate and the plurality of wiring planes;
• a first contact terminal, comprising a first stack of metal areas in the plurality of the wiring planes and configured to connect the signal path to a first external device during a test of the integrated semiconductor circuit;
• a second contact terminal comprising a metal area in one of the plurality of wiring planes for connecting the signal path to second external device during normal operation of the integrated semiconductor circuit, wherein a first distance between a bottommost portion of the second contact terminal and the substrate is greater than a second distance between a bottommost metal area of the first stack of the first contact terminal and the substrate, wherein the second contact terminal, relative to the substrate, has a lower capacitance than the first contact terminal, relative to the substrate;
• and
• a switch between the first contact terminal and the signal path.

A method for producing an integrated semiconductor circuit, wherein the semiconductor circuit comprises a substrate with a circuit, the method comprising:

• creating a plurality of wiring planes on the substrate, the wiring planes being isolated from one another and from the substrate by insulator layers;
• creating a signal path in the wiring planes and the substrate;
• creating a first contact terminal from a first stack of metal areas in the plurality of the wiring planes, configured to connect the signal path to one of a first external signal source and a first external signal receiver;
• creating a second contact terminal from one of a metal area in a wiring plane and a second stack of metal areas in the plurality of wiring planes, configured to connect the signal path to one of a second external signal source and a second external signal receiver, wherein a first distance between the metal area or a bottommost metal area of the second stack of the second contact terminal and the substrate is greater than a second distance between a bottommost metal area of the first stack of the first contact terminal and the substrate.

A semiconductor device comprising:

• a substrate;
• a first contact comprising a plurality of overlapping metal areas, wherein each metal area is approximately the same area, and wherein each overlapping metal area is in a different layer of the semiconductor device, including a topmost layer of the semiconductor device;
• and
• a second contact area comprising a metal area arranged in the topmost layer of the semiconductor device, wherein the second contact area has a lower capacitance with respect to the substrate than the first contract, and wherein the first contact and the second contact are used to access a signal path of the semiconductor device.