Substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsTakahiro Horiguchi, Ryo Kuwajima
Life of this patent
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Abstract
The substrate processing apparatus according to the present invention is aimed to stably and efficiently perform a deposition process on a substrate W. The substrate processing apparatus supports the substrate W in a position facing a heater portion and thus rotates a holding member holding the substrate W. Furthermore, the heating portion houses a SiC heater and a heat reflecting member in an internal portion of a quartz bell jar made of transparent quartz, and depressurizes an internal space of a processing vessel and an internal space of the quartz bell jar at the same time; thereby allowing the thickness of the quartz bell jar to be thinner, and thus improving thermal conductivity of heat from the SiC heater and preventing contamination by the SiC heater.
Claims9
1-10. (canceled)
A substrate processing apparatus comprising:
- a processing vessel that defines a processing space therein;
- a heater portion that heats a substrate introduced into the processing space to a predetermined temperature;
- a transparent case made of quartz, the transparent case including a cylinder portion and a top plate for containing the heater portion;
- a heater plate mounted on the top plate of the transparent case;
- and
- a holding member for holding the substrate at a position spaced from and opposite to the heater plate.
Dependencies are inferred from the claim text.