Method of depositing noble metal electrode using oxidation-reduction reaction
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-hyun Lee, Sang-jun Choi
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Abstract
Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber; and generating plasma in the reaction chamber to form a noble metal layer or a noble metal oxide layer on a bottom structure.
Claims26
A method of depositing a noble metal electrode using an oxidation-reduction reaction, comprising:
- flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber;
- and
- generating plasma in the reaction chamber to form a noble metal layer or a noble metal oxide layer on a bottom structure.
A method of manufacturing a semiconductor capacitor comprising a bottom structure and a bottom electrode, a dielectric layer, and a top electrode sequentially formed on the bottom structure,
- wherein the bottom electrode and/or the top electrode are formed using a method of depositing a noble metal electrode using an oxidation-reduction reaction, comprising:
- flowng a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber;
- and
- generating plasma in the reaction chamber to form a noble metal layer or a noble metal oxide layer.
Dependencies are inferred from the claim text.