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US 2006/0040414 A1Published application
Methods of forming conductive materials
AssigneeMicron Technology, Inc.
InventorHaining Yang
Life of this patent
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Abstract
The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the substrate. The precursor is exposed to a reducing atmosphere to release metal from the precursor, and subsequently the released metal is deposited over the semiconductor substrate. The invention also includes capacitor constructions, and methods of forming capacitor constructions.
Claims4
1-41. (canceled)
A method of forming a conductive material, comprising:
- providing a semiconductor substrate having a tungsten-comprising layer thereover, the tungsten-comprising layer comprising an upper surface of elemental tungsten;
- exposing one or more metallo-organic precursors to a reducing atmosphere to release metal from at least one of said precursors, the one or more precursors comprising one or more of ruthenium, rhodium, iridium, cobalt, palladium, and nickel;
- and
- depositing the released metal over the tungsten-comprising layer to form a conductive material on the tungsten-comprising layer, wherein the conductive material is formed physically against the upper surface.
1 more element
Dependencies are inferred from the claim text.